Electron loss from electrons moving from the epi region into the P tub

epi doping level

P tub doping level? Please check me on this.

silicon temperature

what I think is the potential difference between the epi and the P tube. Please check me on this.

Given the barrier potential barrier for the electrons one normally calculates a jump frequency which is the frequency with which the electron will thermally jump over the barrier.

where n is the frequency that the electron encounters the barrier

As long as the life time from this process,

,is long compared to our collection

time then this is not an issue.

We can quantify this effect without looking up n by considering that the number of times that the electron encounters the P tub barrier before it is collected by the n well diode is just given by the ratio of the areas. In doing this analysis we assume that the electron is never lost into the substrate because the potential barrier on this side is much larger because of the higher acceptor doping in the substrate.

So the loss fraction:

and then substituting in our expression above for F

So we could have a 10% loss, need to get the correct doping levels to get this right.